MRF7S35120HSR5参数:MOSFET RF N-CH 120W NI-780S
类别:分立半导体产品-RF FETPCNObsolescence: RFDevices01/Jul/2010标准包装:50系列:-包装:带卷(TR)晶体管类型:LDMOS频率:3.1GHz增益:12dB电压-测试:32V额定电流:10µA噪声系数:-电流-测试:150mA功率-输出:120W电压-额定:65V封装:NI-780S供应商器件封装:NI-780S